PMEG3020EP_1
? NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 15 September 2009 3 of 13
NXP Semiconductors
PMEG3020EP
2 A low VF
MEGA Schottky barrier recti?er
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Tj
=25°C prior to surge.
[3] Re?ow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR
are a signi?cant part of the total power losses.
[2] Re?ow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[6] Soldering point of cathode tab.
Tj
junction temperature - 150°C
Tamb
ambient temperature
?55 +150
°C
Tstg
storage temperature
?65 +150
°C
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance fromin free air
junction to ambient
[1][2]
[3]- - 200 K/W
[4]- - 120 K/W
[5]--60K/W
Rth(j-sp)
thermal resistance from
junction to solder point
[6]
--12K/W
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